aot12n60fd/AOTF12N60FD 600v, 12a n-channel mosfet general description product summary v ds i d (atv gs =10v) 12a r ds(on) (atv gs =10v) <0.65 w 100%uistested100%r g tested forhalogenfreeadd"l"suffixtopartnumber:aot12n60fdl&AOTF12N60FDl symbolv ds v gs i dm i ar e ar e as peakdioderecoverydv/dt dv/dt t j ,t stg t l symbol r q ja r q cs r q jc *draincurrentlimitedbymaximumjunctiontemperature. units powerdissipation b p d t c =25c thermal characteristics 300 55to150 avalanchecurrent c 375 singlepulsedavalancheenergy g 750 5 repetitiveavalancheenergy c v 30 gatesourcevoltage t c =100c a 48 pulseddraincurrent c continuousdraincurrent t c =25c i d theaot12n60fd/AOTF12N60FDhavebeenfabricated usinganadvancedhighvoltagemosfetprocessthatis designedtodeliverhighlevelsofperformanceand robustnessinpopularacdcapplications. byprovidinglowr ds(on) ,c iss andc rss alongwith guaranteedavalanchecapabilitythesepartscanbeadoptedquicklyintonewandexistingofflinepowersupply designs. v units parameter absolute maximum ratings t a =25c unless otherwise noted 700v@150 drainsourcevoltage 600 aot12n60fd maximumjunctiontocase mj c/w derateabove25 o c parameter maximumleadtemperatureforsoldering purpose,1/8"fromcasefor5seconds c/w 5 junctionandstoragetemperaturerangemaximumjunctiontoambient a,d a w w/ o c c mj v/ns c AOTF12N60FD aot12n60fd AOTF12N60FD 278 50 2.2 0.4 12 8 12* 8* 65 0.45 65 2.5 maximumcasetosink a 0.5 c/w g ds top view to-220f to-220 g d s g d s rev3:mar2011 www.aosmd.com page1of6
aot12n60fd/AOTF12N60FD symbol min typ max units 600 700 bv dss /?tj 0.68 v/ o c 10 100 i gss gatebodyleakagecurrent 100 n a v gs(th) gatethresholdvoltage 2.4 3 4 v r ds(on) 0.51 0.65 w g fs 12 s v sd 1.3 1.6 v i s maximumbodydiodecontinuouscurrent 12 a i sm 48 a c iss 1310 1659 2010 pf c oss 110 166 220 pf c rss 9 15.8 23 pf r g 1.8 3.7 5.6 w q g 32 41 50 nc q gs 8.7 nc q gd 19 nc t d(on) 34 ns t r 90 ns t d(off) 120 ns t f 82 ns t rr 135 220 ns q rr 0.5 0.8 m c thisproducthasbeendesignedandqualifiedfortheconsumermarket.applicationsorusesascriticalcomponentsinlifesupportdevicesorsystemsarenotauthorized.aosdoesnotassumeanyliabilityarising outofsuchapplicationsorusesofitsproducts.aosreservestherighttoimproveproductdesign, functionsandreliabilitywithoutnotice. gatedraincharge diodeforwardvoltage zerogatevoltagedraincurrent v ds =600v,v gs =0v outputcapacitance v ds =5v i d =250 m a v ds =480v,t j =125c i d =10ma,v gs =0v,t j =25c i d =10ma,v gs =0v,t j =150c m a bodydiodereverserecoverycharge i f =12a,di/dt=100a/ m s,v ds =100v maximumbodydiodepulsedcurrentinputcapacitance v ds =0v,v gs =30v gatesourcechargeturnondelaytime dynamic parameters turnonrisetimeturnoffdelaytime v gs =10v,v ds =300v,i d =12a, r g =25 w gateresistance v gs =0v,v ds =0v,f=1mhz turnofffalltime totalgatecharge v gs =10v,v ds =480v,i d =12a zerogatevoltagedraincurrent i d =10ma,vgs=0v i dss electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions bv dss v drainsourcebreakdownvoltagebodydiodereverserecoverytime staticdrainsourceonresistance v gs =10v,i d =6a reversetransfercapacitance i f =12a,di/dt=100a/ m s,v ds =100v v gs =0v,v ds =25v,f=1mhz switching parameters i s =12a,v gs =0v v ds =40v,i d =6a forwardtransconductance a.thevalueofr q ja ismeasuredwiththedeviceinastillairenvironmentwitht a =25c. b.thepowerdissipationp d isbasedont j(max) =150c,usingjunctiontocasethermalresistance,andismoreusefulinsettingtheupperdissipation limitforcaseswhereadditionalheatsinkingisused.c.repetitiverating,pulsewidthlimitedbyjunctiontemperaturet j(max) =150c,ratingsarebasedonlowfrequencyanddutycyclestokeepinitialt j =25c.d.ther q ja isthesumofthethermalimpedancefromjunctiontocaser q jc andcasetoambient. e.thestaticcharacteristicsinfigures1to6areobtainedusing<300 m spulses,dutycycle0.5%max. f.thesecurvesarebasedonthejunctiontocasethermalimped ancewhichismeasuredwiththedevicemountedtoalargeheatsink,assuminga maximumjunctiontemperatureoft j(max) =150c.thesoacurveprovidesasinglepulserating. g.l=60mh,i as =5a,v dd =150v,r g =25 ? ,startingt j =25c rev3:mar2011 www.aosmd.com page2of6
aot12n60fd/AOTF12N60FD typical electrical and thermal characteristics 1.0e05 1.0e04 1.0e03 1.0e02 1.0e01 1.0e+00 1.0e+01 1.0e+02 0.0 0.4 0.8 1.2 1.6 v sd (volts) figure 6: body-diode characteristics(note e) i s (a) 25c 125c 0 4 8 12 16 20 24 0 5 10 15 20 25 30 v ds (volts) fig 1: on-region characteristics i d (a) v gs =5.5v 6v 10v 6.5v 0.1 1 10 100 2 4 6 8 10 v gs (volts) figure 2: transfer characteristics i d (a) 55c v ds =40v 25c 125c 0.0 0.3 0.6 0.9 1.2 0 4 8 12 16 20 24 28 i d (a) figure 3: on-resistance vs. drain current and gate voltage r ds(on) ( w ww w ) v gs =10v 0 0.5 1 1.5 2 2.5 3 100 50 0 50 100 150 200 temperature (c) figure 4: on-resistance vs. junction temperature normalized on-resistance v gs =10v i d =6a 0.8 0.9 1 1.1 1.2 100 50 0 50 100 150 200 t j (c) figure 5:break down vs. junction temparature bv dss (normalized) rev3:mar2011 www.aosmd.com page3of6
aot12n60fd/AOTF12N60FD typical electrical and thermal characteristics 0 3 6 9 12 15 0 10 20 30 40 50 60 q g (nc) figure 7: gate-charge characteristics v gs (volts) v ds =480v i d =12a 1 10 100 1000 10000 0.1 1 10 100 v ds (volts) figure 8: capacitance characteristics capacitance (pf) c iss c oss c rss 0.01 0.1 1 10 100 1 10 100 1000 v ds (volts) i d (amps) figure 10: maximum forward biased safe operating area for AOTF12N60FD (note f) 10 m s 10ms 1ms 0.1s dc r ds(on) limited t j(max) =150c t c =25c 100 m s 0 3 6 9 12 15 0 25 50 75 100 125 150 t case (c) figure 11: current de-rating (note b) current rating i d (a) 1s 0.01 0.1 1 10 100 1 10 100 1000 v ds (volts) i d (amps) figure 9: maximum forward biased safe operating area for aot12n60fd (note f) 10 m s 10ms 1ms 0.1s dc r ds(on) limited t j(max) =150c t c =25c 100 m s rev3:mar2011 www.aosmd.com page4of6
aot12n60fd/AOTF12N60FD typical electrical and thermal characteristics 0.001 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 pulse width (s) figure 12: normalized maximum transient thermal impedance for aot12n60fd (note f) z q qq q jc normalized transient thermal resistance d=t on /t t j,pk =t c +p dm .z q jc .r q jc r q jc =0.45c/w indescendingorderd=0.5,0.3,0.1,0.05,0.02,0.01,singlepulse t on t p d singlepulse 0.001 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 pulse width (s) figure 13: normalized maximum transient thermal impedance for AOTF12N60FD (note f) z q qq q jc normalized transient thermal resistance d=t on /t t j,pk =t c +p dm .z q jc .r q jc r q jc =2.5c/w indescendingorderd=0.5,0.3,0.1,0.05,0.02,0.01,singlepulse singlepulse t on t p d 20 15 10 5 0 5 10 15 600 300 0 300 600 900 1200 trr (ns) figure 14: diode recovery characteristics i f (a) v ds =100v i f =12a di/dt=100a/ m s a ot(f)12n60fd aot (f)12n60 rev3:mar2011 www.aosmd.com page5of6
aot12n60fd/AOTF12N60FD + vdc ig vds dut + vdc vgs vgs 10v qg qgs qgd charge gatechargetestcircuit&waveform + vdc dut vdd vgs vds vgs rl rg vgs vds 10% 90% resistiveswitchingtestcircuit&waveforms t t r d(on) t on t d(off) t f t off vdd vgs id vgs rg dut + vdc l vgs vds id vgs bv i unclampedinductiveswitching(uis)testcircuit& waveforms ig vgs + vdc dut l vds vgs vds isd isd dioderecoverytes tcircuit&waveforms vds vds+ i f ar dss 2 e=1/2li di/dt i rm rr vdd vdd q=idt t rr ar ar rev3:mar2011 www.aosmd.com page6of6
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